K9DUGB8S7M
Samsung · 512GB TLC · BGA316
Chip Specifications
Structured Data- Brand
- Samsung
- Capacity
- 512GB
- Flash Cell
- TLC
- Process
- SSv3
- Flash Type
- TLC
- Package
- BGA316
- Voltage
- VCC:3.3V，VCCQ:1.8V
- Operating Mode
- Toggle3.0
- Die Count
- 16
- CE Count
- 8
EC1ED92F88C9Flash ID Identification
A Flash ID is an important identifier, but it cannot prove full compatibility by itself. Vendors may reuse some bytes across capacities, processes, or packages, and MP tools may display the bytes in a different order.
Verify in this order:
- Read the ID on the original PCB and record the value returned by every channel and CE.
- Compare the part number, capacity, brand, and package to eliminate obvious mismatches.
- Match the complete ID in the MP tool database, not only the first two bytes.
- Verify geometry parameters such as Page, Block, Plane, LUN, and ECC.
- Confirm stability with a limited read/write test before a full-device production run.
Benchmark Records
Associated public benchmark records: 4. Sequential read averages 387.2 MB/s and peaks at 528.0 MB/s; sequential write averages 349.5 MB/s and peaks at 482.0 MB/s.
| Test Controller | Flash Count | Sequential Speed | Random Speed | Operating System | Notes |
|---|---|---|---|---|---|
| SM2258XT | 1 | R:294.7MB/s, W:294.4MB/s | R:15.3MB/s, W:33.6MB/s | Windows10 | 2258XT黑色G2板ASM1153E桥接 |
| SM2258H | 1 | R:284.5MB/s, W:269.1MB/s | R:19.7MB/s, W:35.2MB/s | Windows10 | ASM235CM 58H方力黑板 |
| SM2258H | 2 | R:441.63MB/s, W:352.41MB/s | R:27.4MB/s, W:81.11MB/s | Windows7 | 实际上是2258G在第二颗颗粒炸了一排ce的情况下开出来720g 而且是热拔插 |
| SM2258H | 2 | R:528MB/s, W:482MB/s | R:38.2MB/s, W:113MB/s | Windows11 | 2258H 2CH双贴板 |
Speeds apply only to the tested controller, PCB, firmware, interface bridge, capacity, and environment. USB bridges, SLC cache, free-space state, temperature, and benchmark software can materially change the result; these figures are not absolute Flash performance specifications.
Mass Production and Repair Troubleshooting
Before Mass Production
- Determine whether data recovery is required; mass production and low-level formatting usually destroy the original data.
- Photograph both sides of the PCB, all chip markings, and jumper states.
- Record the full controller marking, oscillator, Flash count, and CE count per chip.
- Back up the ROM, ISP data, configuration files, and tool logs.
- Use a current-limited power supply to check for shorts and abnormal heating.
When the Device Is Not Detected
- Check VCC/VCCQ, reset, and clock signals.
- Check for weak BGA joints, lifted pads, and broken channel traces.
- Read IDs by channel and CE to isolate a faulty chip.
- Try the matching MP tool version or Flash database.
- Confirm that the firmware supports the process and ECC requirements.
- If uncertainty remains, stop writing and preserve the original state.
Technical Documents and Standards
- Search for the official K9DUGB8S7M datasheet: prefer the chip vendor’s website and the original PDF, and verify the document revision.
- Official ONFI 6.0 Specification：NAND interfaces, commands, parameter pages, and high-speed timing.
- Official ONFI 5.1 Specification：Covers SDR, NV-DDR, NV-DDR2, NV-DDR3, and related interfaces.
- JEDEC Standards and Document Search：Search standards for packages, electrical characteristics, SSDs, UFS, eMMC, and related technologies.
In the manufacturer datasheet, verify the ordering part number, package code, pins, absolute maximum ratings, operating voltage, interface timing, memory organization, bad-block management, ECC, endurance, and data retention. If search results conflict with this page, rely on the correct datasheet revision and physical measurements.
Data Reliability Notice
This page is compiled from public structured data and user benchmark records; it is not an official Samsung datasheet. Hardware details can vary by batch, firmware, or tool identification method. Cross-check multiple sources for data recovery, production use, or high-value devices.