FLASH DATA SHEET

TH58TFG9DDLBA8C

Toshiba · 64GB MLC · BGA132

Toshiba

Chip Specifications

Structured Data
Brand
Toshiba
Capacity
64GB
Flash Cell
MLC
Process
15nm
Flash Type
NAND
Package
BGA132
Voltage
VCC: 3.3V VCCQ: 3.3V/1.8V
Operating Mode
Synchronous mode(Toggle)
Die Count
4
CE Count
4
FLASH ID
983A949376D1

Flash ID Identification

A Flash ID is an important identifier, but it cannot prove full compatibility by itself. Vendors may reuse some bytes across capacities, processes, or packages, and MP tools may display the bytes in a different order.

Verify in this order:

  1. Read the ID on the original PCB and record the value returned by every channel and CE.
  2. Compare the part number, capacity, brand, and package to eliminate obvious mismatches.
  3. Match the complete ID in the MP tool database, not only the first two bytes.
  4. Verify geometry parameters such as Page, Block, Plane, LUN, and ECC.
  5. Confirm stability with a limited read/write test before a full-device production run.

Benchmark Records

Associated public benchmark records: 21. Sequential read averages 289.9 MB/s and peaks at 524.0 MB/s; sequential write averages 127.7 MB/s and peaks at 369.3 MB/s.

Test ControllerFlash CountSequential SpeedRandom SpeedOperating SystemNotes
SM2246EN2R:412.0MB/s, W:180.0MB/sR:17.3MB/s, W:25.8MB/sWindows10U盘主控板 桥接ASM1351,USB3.0
SM2246EN4R:512.3MB/s, W:369.3MB/sR:22.6MB/s, W:50.2MB/sWindows10SSD硬盘主控板
SM32811R:254.5MB/s, W:85.2MB/sR:10.3MB/s, W:6.6MB/sWindows10-
SM32802R:384.0MB/s, W:142.0MB/sR:12.3MB/s, W:7.8MB/sWindows10-
IS9032R:283.0MB/s, W:198.0MB/sR:0.0MB/s, W:0.0MB/sWindows10普通G2绿色板
SM32811R:306MB/s, W:82MB/sR:12.5MB/s, W:7.7MB/sWindows10-
SM32811R:286MB/s, W:78MB/sR:8.1MB/s, W:6.8MB/sWindows103281单帖板子
SM2246EN2R:524MB/s, W:197MB/sR:31.1MB/s, W:75.1MB/sWindows10创见-4帖小板子,SATA 3.0
PS31112R:327.7MB/s, W:184.5MB/sR:27.2MB/s, W:45.8MB/sWindows10双头板子,235cm桥接,C头在雷电接口上测速。开卡时未启用slc cache。
SM32671R:138MB/s, W:85MB/sR:0MB/s, W:0MB/sWindows10-
SM32811R:290MB/s, W:81MB/sR:10MB/s, W:7MB/sMacOs3281AB 双头板type-c&usb
IS9032R:286.78MB/s, W:195.73MB/sR:0MB/s, W:0MB/sWindows11-
PS31112R:413.57MB/s, W:195.65MB/sR:22.05MB/s, W:38.51MB/sWindows11AMD 3700X直出3.2Gen2 10Gbps通道,双头PS3111+ASM235CM固态U盘板
IS9031R:198MB/s, W:81MB/sR:0MB/s, W:0MB/sWindows7测试架 VCCQ=3.3V
SM32681R:118MB/s, W:52MB/sR:0MB/s, W:0MB/sWindows7i5-6200U
SM32681R:143MB/s, W:64MB/sR:0MB/s, W:0MB/sWindows10I5-3450 标压U
IS9171R:137.6MB/s, W:83.4MB/sR:0MB/s, W:0MB/sWindows7主控版本IS917-E1
SM32811R:324.4MB/s, W:74.8MB/sR:14.1MB/s, W:7.2MB/sWindows11-
SM32811R:252.9MB/s, W:74.4MB/sR:0MB/s, W:0MB/sWindows11-
SM32811R:305.6MB/s, W:77.2MB/sR:10.7MB/s, W:6.9MB/sWindows113281AB DBF参数A8改C8超频
IS9031R:190.8MB/s, W:102.2MB/sR:0.0MB/s, W:0.0MB/sWindows11写保护板

Speeds apply only to the tested controller, PCB, firmware, interface bridge, capacity, and environment. USB bridges, SLC cache, free-space state, temperature, and benchmark software can materially change the result; these figures are not absolute Flash performance specifications.

Mass Production and Repair Troubleshooting

Before Mass Production

  • Determine whether data recovery is required; mass production and low-level formatting usually destroy the original data.
  • Photograph both sides of the PCB, all chip markings, and jumper states.
  • Record the full controller marking, oscillator, Flash count, and CE count per chip.
  • Back up the ROM, ISP data, configuration files, and tool logs.
  • Use a current-limited power supply to check for shorts and abnormal heating.

When the Device Is Not Detected

  1. Check VCC/VCCQ, reset, and clock signals.
  2. Check for weak BGA joints, lifted pads, and broken channel traces.
  3. Read IDs by channel and CE to isolate a faulty chip.
  4. Try the matching MP tool version or Flash database.
  5. Confirm that the firmware supports the process and ECC requirements.
  6. If uncertainty remains, stop writing and preserve the original state.

Technical Documents and Standards

In the manufacturer datasheet, verify the ordering part number, package code, pins, absolute maximum ratings, operating voltage, interface timing, memory organization, bad-block management, ECC, endurance, and data retention. If search results conflict with this page, rely on the correct datasheet revision and physical measurements.

Data Reliability Notice

This page is compiled from public structured data and user benchmark records; it is not an official Toshiba datasheet. Hardware details can vary by batch, firmware, or tool identification method. Cross-check multiple sources for data recovery, production use, or high-value devices.