TH58TFT0DFKBA8J
Toshiba · 128GB MLC · BGA152
Chip Specifications
Structured Data- Brand
- Toshiba
- Capacity
- 128GB
- Flash Cell
- MLC
- Process
- 19nm
- Flash Type
- NAND
- Package
- BGA152
- Voltage
- VCC: 3.3V VCCQ: 3.3V/1.8V
- Operating Mode
- Synchronous mode
- Die Count
- 8
- CE Count
- 4
983CA5937E50983CA5937ED0Flash ID Identification
A Flash ID is an important identifier, but it cannot prove full compatibility by itself. Vendors may reuse some bytes across capacities, processes, or packages, and MP tools may display the bytes in a different order.
Verify in this order:
- Read the ID on the original PCB and record the value returned by every channel and CE.
- Compare the part number, capacity, brand, and package to eliminate obvious mismatches.
- Match the complete ID in the MP tool database, not only the first two bytes.
- Verify geometry parameters such as Page, Block, Plane, LUN, and ECC.
- Confirm stability with a limited read/write test before a full-device production run.
Benchmark Records
Associated public benchmark records: 47. Sequential read averages 346.3 MB/s and peaks at 569.6 MB/s; sequential write averages 274.0 MB/s and peaks at 457.0 MB/s.
| Test Controller | Flash Count | Sequential Speed | Random Speed | Operating System | Notes |
|---|---|---|---|---|---|
| IS903 | 2 | R:290.0MB/s, W:200.0MB/s | R:0.0MB/s, W:0.0MB/s | Windows10 | - |
| SM3280 | 2 | R:364.0MB/s, W:130.0MB/s | R:11.2MB/s, W:6.1MB/s | Windows10 | - |
| SM3281 | 1 | R:305.0MB/s, W:132.0MB/s | R:12.3MB/s, W:6.8MB/s | Windows10 | - |
| SM2246XT | 2 | R:420.0MB/s, W:374.0MB/s | R:17.3MB/s, W:42.2MB/s | Windows10 | U盘板+1153E桥接,USB3.0 |
| SM2246EN | 2 | R:460.0MB/s, W:420.0MB/s | R:22.3MB/s, W:41.2MB/s | Windows10 | u盘板+1351桥接,USB3.0 |
| IS903 | 2 | R:301.6MB/s, W:183.8MB/s | R:4.4MB/s, W:0.1MB/s | Windows10 | - |
| SM2246EN | 2 | R:534.8MB/s, W:421.4MB/s | R:22.2MB/s, W:37.0MB/s | Windows10 | 笔记本 1351桥接 usb3.1 10Gb/s |
| IS903 | 2 | R:209.9MB/s, W:90.2MB/s | R:0.0MB/s, W:0.0MB/s | Windows10 | - |
| SM2246EN | 2 | R:533.2MB/s, W:425MB/s | R:23.7MB/s, W:43.8MB/s | Windows10 | 外接typec转usb ,U盘板 ,4k64读:114.6,写:139.3 |
| SM3280 | 1 | R:380.1MB/s, W:120.3MB/s | R:10.8MB/s, W:6.8MB/s | Windows10 | 颗粒ID:983CA5937E50 主控版本:AB |
| SM2246XT | 2 | R:401.3MB/s, W:372.1MB/s | R:14.2MB/s, W:37.0MB/s | Windows10 | 球球板,VL716-Q4桥接,4K-64读写:114.5/137.1 |
| SM2246XT | 2 | R:391.7MB/s, W:364.8MB/s | R:13.3MB/s, W:35.5MB/s | Windows10 | 球球VL716转接 |
| SM2246EN | 2 | R:424MB/s, W:410MB/s | R:19.4MB/s, W:26.0MB/s | Windows11 | Wintogo装Win11(4k十几的U盘,3281ab,双贴64g闪迪tlc),4k-64写有109,读有问题,测不出来,有时一千多,有时六百多,所以本数据仅供参考 |
| SM2246EN | 2 | R:417.6MB/s, W:414MB/s | R:24.0MB/s, W:34.7MB/s | Windows11 | 在as ssd中,4k-64读写分别是147.49和136.93,读取分别是0.105ms和0.111ms,总分545。在基准测试中读写都有四百四十多 |
| SM2246XT | 2 | R:355.3MB/s, W:221.2MB/s | R:20.3MB/s, W:81.7MB/s | Windows7 | - |
| SM2246EN | 8 | R:348.5MB/s, W:301.1MB/s | R:33.4MB/s, W:76.9MB/s | Windows7 | 8贴sata板子开出 |
| SM3281 | 1 | R:316.42MB/s, W:134.10MB/s | R:14.75MB/s, W:8.21MB/s | Windows11 | 3281AB 这算体质好的吗 |
| PS3111 | 2 | R:412.4MB/s, W:368.3MB/s | R:26.6MB/s, W:38.5MB/s | Windows10 | 0EDK双贴,6081的优盘版开卡。jms578桥接,3.0接口 |
| SM3267 | 1 | R:122.9MB/s, W:59.3MB/s | R:0.0MB/s, W:0.0MB/s | Windows10 | 3267AE G2写保护板单贴开卡 |
| SM2246XT | 2 | R:376MB/s, W:344MB/s | R:14MB/s, W:26MB/s | Windows11 | - |
| SM2246EN | 2 | R:466.58MB/s, W:456.17MB/s | R:23.17MB/s, W:39.70MB/s | Windows10 | u盘板+1351桥接,USB3.0 |
| SM2246EN | 2 | R:569.63MB/s, W:456.95MB/s | R:24.56MB/s, W:52.72MB/s | Windows11 | 方力黑板512MB缓存 |
| SM2258XT | 2 | R:410.5MB/s, W:297.3MB/s | R:17.1MB/s, W:8.9MB/s | Windows10 | 0EFK,2258xt优盘版1153e桥接,win10+3.0测速,开出240g,半盘SLC模拟 |
| SM2246EN | 2 | R:535MB/s, W:455MB/s | R:60MB/s, W:25MB/s | Windows11 | - |
| SM3268 | 1 | R:119.12MB/s, W:79.49MB/s | R:0MB/s, W:0MB/s | Windows10 | - |
| IS903 | 1 | R:291.30MB/s, W:109.61MB/s | R:0MB/s, W:0MB/s | Windows10 | ID:983CA5937E50 |
| IS903 | 2 | R:253.59MB/s, W:199.28MB/s | R:0MB/s, W:0MB/s | Windows10 | 双贴0DFK,1.26版本固件,速度为全盘跑圈速度,4K未测 |
| SM2246XT | 2 | R:461.50MB/s, W:400.80MB/s | R:153.36MB/s, W:153.36MB/s | Windows10 | 黑板子 g2版型 160316_A8_08_18_TRIM固件 crydisk测速软件 |
| IS903 | 2 | R:160.85MB/s, W:275.6MB/s | R:0MB/s, W:0MB/s | Windows10 | - |
| SM2246XT | 2 | R:440MB/s, W:391.49MB/s | R:90.37MB/s, W:91.34MB/s | Windows11 | u盘 1153e桥接 |
| SM2246XT | 2 | R:321.48MB/s, W:230.01MB/s | R:12.42MB/s, W:22.47MB/s | Windows7 | - |
| AU6989 | 1 | R:18.68MB/s, W:8.01MB/s | R:0MB/s, W:0MB/s | Windows10 | 6989-gtc |
| IS903 | 2 | R:200.13MB/s, W:298.53MB/s | R:0MB/s, W:0MB/s | Windows10 | - |
| SM2246XT | 2 | R:361.86MB/s, W:422.07MB/s | R:14.05MB/s, W:36.81MB/s | Windows10 | - |
| SM3268 | 1 | R:110MB/s, W:60MB/s | R:0MB/s, W:0MB/s | Windows10 | 垃圾板子,别碰,不过便宜就是了 |
| IS903 | 2 | R:295.51MB/s, W:189.02MB/s | R:0MB/s, W:0MB/s | Windows10 | 4k等于没有,顺序还行 |
| SM2246XT | 2 | R:490MB/s, W:416MB/s | R:17MB/s, W:63MB/s | Windows11 | - |
| SM2246XT | 1 | R:281.51MB/s, W:252.33MB/s | R:96.23MB/s, W:186.50MB/s | Windows10 | msata固态 syscore mt500 |
| IS903 | 1 | R:315.55MB/s, W:108.78MB/s | R:8MB/s, W:0.0MB/s | Windows11 | NP111 14239AE |
| IS903 | 1 | R:305.90MB/s, W:107.68MB/s | R:7MB/s, W:0MB/s | Windows11 | AD0552 14339AE |
| SM2246EN | 4 | R:412.75MB/s, W:448.83MB/s | R:11.76MB/s, W:71.39MB/s | Windows10 | ngff版型,1153e桥接 |
| SM2246XT | 1 | R:325.41MB/s, W:260.27MB/s | R:15.01MB/s, W:36.88MB/s | Windows11 | - |
| SM2246XT | 2 | R:531.97MB/s, W:454.01MB/s | R:24.26MB/s, W:73.13MB/s | Windows11 | 235CM桥接、Type-C接口 |
| SM2246XT | 1 | R:323MB/s, W:261MB/s | R:14.34MB/s, W:33.31MB/s | Windows10 | MLC全新颗粒,卖家声称是正片,价格75.单贴,桥接1153E,无缓存G2 的pcba |
| SM2246XT | 1 | R:329.77MB/s, W:269.09MB/s | R:13.76MB/s, W:42.42MB/s | Windows11 | AS SSD跑分321 |
| SM3267 | 1 | R:145 MB/s, W:75 MB/s | R:0 MB/s, W:0 MB/s | Windows10 | SM3267AC |
| SM2246EN | 2 | R:434.5MB/s, W:412.33MB/s | R:19.3MB/s, W:37.4MB/s | Windows10 | U盘板+1153E桥接(USAP固件),USB3.0 |
Speeds apply only to the tested controller, PCB, firmware, interface bridge, capacity, and environment. USB bridges, SLC cache, free-space state, temperature, and benchmark software can materially change the result; these figures are not absolute Flash performance specifications.
Mass Production and Repair Troubleshooting
Before Mass Production
- Determine whether data recovery is required; mass production and low-level formatting usually destroy the original data.
- Photograph both sides of the PCB, all chip markings, and jumper states.
- Record the full controller marking, oscillator, Flash count, and CE count per chip.
- Back up the ROM, ISP data, configuration files, and tool logs.
- Use a current-limited power supply to check for shorts and abnormal heating.
When the Device Is Not Detected
- Check VCC/VCCQ, reset, and clock signals.
- Check for weak BGA joints, lifted pads, and broken channel traces.
- Read IDs by channel and CE to isolate a faulty chip.
- Try the matching MP tool version or Flash database.
- Confirm that the firmware supports the process and ECC requirements.
- If uncertainty remains, stop writing and preserve the original state.
Technical Documents and Standards
- Search for the official TH58TFT0DFKBA8J datasheet: prefer the chip vendor’s website and the original PDF, and verify the document revision.
- Official ONFI 6.0 Specification:NAND interfaces, commands, parameter pages, and high-speed timing.
- Official ONFI 5.1 Specification:Covers SDR, NV-DDR, NV-DDR2, NV-DDR3, and related interfaces.
- JEDEC Standards and Document Search:Search standards for packages, electrical characteristics, SSDs, UFS, eMMC, and related technologies.
In the manufacturer datasheet, verify the ordering part number, package code, pins, absolute maximum ratings, operating voltage, interface timing, memory organization, bad-block management, ECC, endurance, and data retention. If search results conflict with this page, rely on the correct datasheet revision and physical measurements.
Data Reliability Notice
This page is compiled from public structured data and user benchmark records; it is not an official Toshiba datasheet. Hardware details can vary by batch, firmware, or tool identification method. Cross-check multiple sources for data recovery, production use, or high-value devices.