FLASH DATA SHEET

TH58TFT1EFLBA8P

Toshiba · 256GB EMLC · BGA132

Toshiba

Chip Specifications

Structured Data
Brand
Toshiba
Capacity
256GB
Flash Cell
EMLC
Process
15nm
Flash Type
NAND
Package
BGA132
Voltage
VCC: 3.3V VCCQ: 3.3V/1.8V
Operating Mode
Synchronous mode(Toggle) 
Die Count
16
CE Count
4
FLASH ID
983EA6937ED1

Flash ID Identification

A Flash ID is an important identifier, but it cannot prove full compatibility by itself. Vendors may reuse some bytes across capacities, processes, or packages, and MP tools may display the bytes in a different order.

Verify in this order:

  1. Read the ID on the original PCB and record the value returned by every channel and CE.
  2. Compare the part number, capacity, brand, and package to eliminate obvious mismatches.
  3. Match the complete ID in the MP tool database, not only the first two bytes.
  4. Verify geometry parameters such as Page, Block, Plane, LUN, and ECC.
  5. Confirm stability with a limited read/write test before a full-device production run.

Benchmark Records

Associated public benchmark records: 12. Sequential read averages 392.9 MB/s and peaks at 568.6 MB/s; sequential write averages 310.3 MB/s and peaks at 418.0 MB/s.

Test ControllerFlash CountSequential SpeedRandom SpeedOperating SystemNotes
SM2246EN2R:521MB/s, W:418MB/sR:33.0MB/s, W:94.5MB/sWindows102246EN 2242版型
SM2246XT1R:318MB/s, W:213MB/sR:13.0MB/s, W:35.0MB/sWindows10球球VL716 写保护U盘,没合适散热外壳,未优化速度
SM2246XT2R:378.72MB/s, W:309.47MB/sR:12.12MB/s, W:25.50MB/sWindows10有cnc散热,未刷固件
SM2258XT1R:429.3MB/s, W:386.4MB/sR:18.2MB/s, W:36.3MB/sWindows10WIN10-USB3.0-235CM-58XT测试架单帖跑分,全盘SLC模拟
PS31112R:403.3MB/s, W:388.9MB/sR:25.1MB/s, W:37.2MB/sWindows10JMS578桥接,紫色优盘板,win10-usb3.0,直写速度255
SM2246EN4R:458.32MB/s, W:395.57MB/sR:18.55MB/s, W:35.53MB/sWindows11降频到22开卡
SM32681R:120MB/s, W:55MB/sR:0MB/s, W:0MB/sWindows10Flash.set如无参数,需要自行添加
SM2246EN8R:421.10MB/s, W:372.00MB/sR:23.02MB/s, W:82.64MB/sWindows102246EN8贴板,双缓存单颗1G
SM2246XT2R:421MB/s, W:360MB/sR:16.35MB/s, W:42.48MB/sWindows10绿板46xt CDM测试 1153e 全默认设置
SM32811R:222.71MB/s, W:88.08MB/sR:10.82MB/s, W:5.11MB/sWindows11-
SM2259XT21R:568.57MB/s, W:361.54MB/sR:34.40MB/s, W:6.55MB/sWindows11SM2259XT2、短版单帖、235CM桥接、全盘SLC模拟
SM2246XT2R:453.15MB/s, W:375.66MB/sR:14.69MB/s, W:39.88MB/sWindows11ASM1153E转接

Speeds apply only to the tested controller, PCB, firmware, interface bridge, capacity, and environment. USB bridges, SLC cache, free-space state, temperature, and benchmark software can materially change the result; these figures are not absolute Flash performance specifications.

Mass Production and Repair Troubleshooting

Before Mass Production

  • Determine whether data recovery is required; mass production and low-level formatting usually destroy the original data.
  • Photograph both sides of the PCB, all chip markings, and jumper states.
  • Record the full controller marking, oscillator, Flash count, and CE count per chip.
  • Back up the ROM, ISP data, configuration files, and tool logs.
  • Use a current-limited power supply to check for shorts and abnormal heating.

When the Device Is Not Detected

  1. Check VCC/VCCQ, reset, and clock signals.
  2. Check for weak BGA joints, lifted pads, and broken channel traces.
  3. Read IDs by channel and CE to isolate a faulty chip.
  4. Try the matching MP tool version or Flash database.
  5. Confirm that the firmware supports the process and ECC requirements.
  6. If uncertainty remains, stop writing and preserve the original state.

Technical Documents and Standards

In the manufacturer datasheet, verify the ordering part number, package code, pins, absolute maximum ratings, operating voltage, interface timing, memory organization, bad-block management, ECC, endurance, and data retention. If search results conflict with this page, rely on the correct datasheet revision and physical measurements.

Data Reliability Notice

This page is compiled from public structured data and user benchmark records; it is not an official Toshiba datasheet. Hardware details can vary by batch, firmware, or tool identification method. Cross-check multiple sources for data recovery, production use, or high-value devices.