FLASH DATA SHEET

TH58TFT1V23BA8H

Toshiba · 256GB 3D TLC · BGA132

Toshiba

Chip Specifications

Structured Data
Brand
Toshiba
Capacity
256GB
Flash Cell
3D TLC
Process
BICS3
Flash Type
NAND
Package
BGA132
Voltage
VCC: 3.3V VCCQ: 3.3V/1.8V
Operating Mode
Synchronous mode(Toggle)
Die Count
4
CE Count
4
FLASH ID
983E99B37AF2
983E99B37A72

Flash ID Identification

A Flash ID is an important identifier, but it cannot prove full compatibility by itself. Vendors may reuse some bytes across capacities, processes, or packages, and MP tools may display the bytes in a different order.

Verify in this order:

  1. Read the ID on the original PCB and record the value returned by every channel and CE.
  2. Compare the part number, capacity, brand, and package to eliminate obvious mismatches.
  3. Match the complete ID in the MP tool database, not only the first two bytes.
  4. Verify geometry parameters such as Page, Block, Plane, LUN, and ECC.
  5. Confirm stability with a limited read/write test before a full-device production run.

Benchmark Records

Associated public benchmark records: 8. Sequential read averages 1,051.3 MB/s and peaks at 2,950.0 MB/s; sequential write averages 889.2 MB/s and peaks at 2,440.0 MB/s.

Test ControllerFlash CountSequential SpeedRandom SpeedOperating SystemNotes
SM2258H2R:509.0MB/s, W:488.0MB/sR:25.6MB/s, W:60.3MB/sWindows10U盘板,CNC外壳散热
SM2263XT2R:1609.2MB/s, W:1345.5MB/sR:37.7MB/s, W:138.7MB/sWindows11-
SM2263XT4R:1608.6MB/s, W:1413.7MB/sR:37.6MB/s, W:139.1MB/sWindows11-
SM2262EN4R:2950MB/s, W:2440MB/sR:60MB/s, W:160MB/sWindows10颗粒频率450
SM2258H2R:512.46MB/s, W:513.49MB/sR:22.44MB/s, W:68.01MB/sWindows11方力黑板512MB缓存
SM2258H8R:531.35MB/s, W:493.83MB/sR:22.19MB/s, W:71.03MB/sWindows10桥接型号ASM235CM
Other2R:368.70MB/s, W:300.29MB/sR:3.44MB/s, W:1.30MB/sWindows10PS2251-08主控
SM32802R:320.87MB/s, W:119.03MB/sR:13.98MB/s, W:16.38MB/sWindows11CDM8.0.1,闪存为1V23的群联版本TA8BG55AIV

Speeds apply only to the tested controller, PCB, firmware, interface bridge, capacity, and environment. USB bridges, SLC cache, free-space state, temperature, and benchmark software can materially change the result; these figures are not absolute Flash performance specifications.

Mass Production and Repair Troubleshooting

Before Mass Production

  • Determine whether data recovery is required; mass production and low-level formatting usually destroy the original data.
  • Photograph both sides of the PCB, all chip markings, and jumper states.
  • Record the full controller marking, oscillator, Flash count, and CE count per chip.
  • Back up the ROM, ISP data, configuration files, and tool logs.
  • Use a current-limited power supply to check for shorts and abnormal heating.

When the Device Is Not Detected

  1. Check VCC/VCCQ, reset, and clock signals.
  2. Check for weak BGA joints, lifted pads, and broken channel traces.
  3. Read IDs by channel and CE to isolate a faulty chip.
  4. Try the matching MP tool version or Flash database.
  5. Confirm that the firmware supports the process and ECC requirements.
  6. If uncertainty remains, stop writing and preserve the original state.

Technical Documents and Standards

In the manufacturer datasheet, verify the ordering part number, package code, pins, absolute maximum ratings, operating voltage, interface timing, memory organization, bad-block management, ECC, endurance, and data retention. If search results conflict with this page, rely on the correct datasheet revision and physical measurements.

Data Reliability Notice

This page is compiled from public structured data and user benchmark records; it is not an official Toshiba datasheet. Hardware details can vary by batch, firmware, or tool identification method. Cross-check multiple sources for data recovery, production use, or high-value devices.